As the global semiconductor industry shifts toward higher efficiency and reliability, electronic grade silicon carbide (SiC) powder has become a key material enabling the next generation of power and high-frequency devices. With its superior thermal conductivity, wide bandgap, and chemical stability, SiC is now the foundation for SiC wafers, MOSFETs, Schottky diodes (SBDs), and RF devices.
Henan Superior Abrasives (HSA) is a professional supplier of high-purity silicon carbide powder for electronic applications, offering customized grades to meet the demands of wafer growth, sintered ceramics, and thermal management materials.
What Is Electronic Grade Silicon Carbide Powder?
Electronic grade SiC powder refers to ultra-high-purity (≥99.99%) silicon carbide produced under strictly controlled conditions. Compared with regular industrial SiC, the electronic grade material features:
- Extremely low impurity content (Fe, Al, Ca < 10 ppm);
- Uniform particle size (D50: 0.3–5 μm);
- Stable α-SiC (4H or 6H) or β-SiC (3C) crystal structure;
- Excellent thermal and electrical properties.
Such powder serves as the raw material for SiC epitaxial wafers, semiconductor substrates, power electronics, and thermal interface materials (TIMs).
Our Products
N Type Silicon Carbide Powder (N-type SiC)
Features
When nitrogen (N) is introduced into the SiC lattice, it replaces part of the carbon atoms, forming n-type conductive SiC.
This doping process effectively:
- Reduces resistivity and enhances electrical conductivity;
- Maintains high thermal conductivity and mechanical hardness;
- Provides excellent oxidation resistance;
- Is typically formed in 6H or 4H hexagonal crystal structures.
Main Applications
(1) Power Electronic Devices
N-type SiC is widely used in SiC MOSFETs, Schottky Barrier Diodes (SBDs), and other power components.
The doping adjusts carrier concentration, significantly improving on-state conductivity and switching efficiency.
(2) Conductive Ceramics
It serves as a stable conductive material for heating elements, electrodes, and rods, ensuring reliable performance at high temperatures.
(3) Thermal Interface Materials (TIMs)
Due to its high thermal conductivity, N-type SiC is also used as a filler in thermal interface materials to enhance heat dissipation in power modules and CPUs.
Intrinsic Silicon Carbide Powder (Undoped SiC)
Features
Intrinsic SiC, also known as undoped SiC, is a pure, stoichiometric semiconductor without intentional impurities.
It shows:
- High electrical resistivity;
- Excellent structural stability and chemical purity;
- Can exist in both α-phase (hexagonal) and β-phase (cubic) structures.
Main Applications
(1) Mechanical and Structural Ceramics
Intrinsic SiC offers high hardness and outstanding wear resistance, making it ideal for bearings, nozzles, and mechanical seal rings.
(2) Refractory Materials
With superb high-temperature stability and oxidation resistance, intrinsic SiC is used in kiln furniture, crucibles, and metallurgical applications.
(3) Optical and Infrared Windows
Its high transparency and thermal stability allow use in infrared optics, mirrors, and aerospace observation systems.
Semi-Insulating Silicon Carbide Powder (Semi-Insulating SiC)
Features
Semi-insulating SiC is designed for high-resistivity applications (>10⁹ Ω·cm).
This is achieved by carefully controlling compensating impurities (e.g., vanadium (V), boron (B), or excess carbon) during synthesis.
The result is a high-purity, electrically insulating SiC material with:
- Excellent dielectric properties;
- Low leakage current;
- Stable performance at high voltage and frequency.
Main Applications
(1) RF and Microwave Device Substrates
Semi-insulating SiC serves as an ideal substrate for GaN-on-SiC devices, significantly reducing parasitic capacitance and energy loss.
It’s widely applied in 5G base stations, radar systems, and satellite communication.
(2) Power Semiconductor Insulating Substrates
Used as the insulating layer in high-voltage, high-frequency electronic components, enabling stable operation and reduced power dissipation.
(3) High-Frequency Circuit Packaging
Combines high resistivity with good thermal conductivity, providing a balanced performance for advanced RF packaging materials.
Cubic Silicon Carbide Powder (3C-SiC)
Features
Cubic SiC, also known as β-SiC, features a zinc-blende (3C) crystal structure.
It has a close lattice match with silicon, allowing it to be epitaxially grown on Si substrates.
Main characteristics include:
- Lower growth temperature (~1600 °C);
- Bandgap of ~2.3 eV (slightly smaller than 4H/6H-SiC);
- Moderate thermal conductivity and breakdown field;
- Excellent mechanical strength.
Main Applications
(1) Integrated Circuits and MEMS Devices
3C-SiC can be grown on silicon wafers, reducing production costs.
It’s ideal for high-temperature micro-electromechanical sensors such as pressure or acceleration sensors.
(2) High-Temperature Electronics
Maintains stable operation above 300 °C, suitable for automotive engines and aerospace monitoring systems.
(3) Optoelectronic Devices
Used in LEDs and UV photodetectors, benefiting from its transparency and semiconductor properties.
Advantages of Electronic Grade SiC
| Property | Benefit |
|---|---|
| Wide Bandgap (3.2 eV) | Enables high-voltage and high-temperature operation |
| High Thermal Conductivity | Superior heat dissipation for power devices |
| High Hardness & Stability | Excellent mechanical and chemical durability |
| Radiation Resistance | Ideal for aerospace and defense electronics |
| Low Defect Density | Improves device yield and reliability |
These properties make SiC the preferred substrate material for next-generation energy systems, electric vehicles, and communication technologies.
HSA’s Electronic Grade SiC Powder Supply
Henan Superior Abrasives (HSA) supplies customized electronic-grade SiC powders designed for different device requirements:
| Grade | Application | Purity | Structure |
|---|---|---|---|
| N-type SiC | SiC wafer & MOSFET | 99.999% | 4H/6H |
| Intrinsic | Structural ceramics | 99.9% | α-SiC |
| Semi-insulating | GaN-on-SiC substrates | 99.99% | 4H |
| 3C-SiC | MEMS, ICs | 99.9% | β-SiC |
HSA Advantages
- Purity up to 6N (99.9999%)
- Controlled particle size (0.3–5 μm)
- ICP impurity analysis reports
- OEM packaging and technical support
FAQs About Electronic Grade Silicon Carbide Powder
What is N-type silicon carbide used for?
N-type SiC is mainly used in power semiconductor devices such as MOSFETs and Schottky diodes. Nitrogen doping introduces n-type conductivity, lowering resistivity and improving current flow, which enhances device efficiency and switching speed.
What is the difference between 4H and 6H silicon carbide?
Both 4H-SiC and 6H-SiC are hexagonal crystal structures, but they differ in stacking sequence and electrical properties.
- 4H-SiC has higher electron mobility, making it preferred for power devices.
- 6H-SiC offers slightly better thermal conductivity, suitable for high-temperature and mechanical applications.
What makes semi-insulating SiC unique?
Semi-insulating SiC has a very high resistivity (>10⁹ Ω·cm) achieved through controlled impurity compensation. It provides excellent electrical insulation with good thermal conductivity, ideal for RF, microwave, and high-voltage isolation substrates.
How is 3C-SiC different from α-type SiC?
3C-SiC (β-phase) has a cubic crystal structure and can be grown directly on silicon wafers, reducing cost.
In contrast, α-type SiC (4H/6H) forms at higher temperatures and has a wider bandgap and better breakdown strength, making it superior for high-power devices.
Why choose HSA as your SiC powder supplier?
Henan Superior Abrasives (HSA) offers consistent high-purity electronic grade SiC powder with traceable quality reports and flexible customization. With grades from N-type to semi-insulating, HSA supports customers in semiconductor, ceramic, and optoelectronic industries worldwide.
Electronic Grade Silicon Carbide Powder Supplier
As SiC-based devices continue to reshape the future of power electronics, communication, and energy systems, the demand for high-quality electronic grade silicon carbide powder will keep growing.
With advanced processing technology and strict quality control, Henan Superior Abrasives (HSA) stands as a trusted supplier, providing N-type, intrinsic, semi-insulating, and 3C-SiC powders tailored to the evolving needs of global semiconductor manufacturers.
Email: sales@superior-abrasives.com
