Полупроводниковые компоненты на основе SiC для электроники
As the world continues to demand more efficient and reliable electronic devices, Карбид кремния (Карбид кремния)-based semiconductor components have emerged as a promising solution for various applications. SiC is known for its High thermal conductivity, High electric field strength, Wide bandgap. These properties enable SiC-based semiconductor components to withstand high temperatures, voltages, and frequencies, делая их […]